Scope of Application
IGBT´s (insulated gate bipolar transistors) are processed on thinned wafers with a thickness of 100µm or less. Often these thinned wafers are mechanically stabilized by using the so-called TAIKO grinding process (DISCO Corp., Japan) and a protection tape on the already processed front side. This tape is not compatible with high process temperatures. If the activation is performed with the semi IGBT Laser Optics, an activation rate of >75% can be achieved for both, the fieldstop and the emitter layer. The tape stays intact during this high temperature process.
Laser anneal system is especially suited for activation of IGBT emitter and field stop layers. The pulse duration of the laser system is selected for deep activation of the dopants and simultaneously prevents damage to the wafer front side or a protection tape. The depth of the activation process is precisely controlled by selecting the laser beam parameters pulse duration, line width and scan speed. The Phosphorous fieldstop layer can be activated up to 2 µm deep. The Laser Anneal system is either operated with a single or with two homogenizer coupled solid state lasers, depending on throughput requirements.
半导体器件制造领域，晶圆越来越薄，常规的高温退火已经无法满足工艺需求，特别是IGBT背面金属化退火方法，激光背面退火的出现有效的解决了这个技术难题，受到客户的关注，IGBT激光退火在西门子，英飞凌，ABB等世界级工厂内使用。类似退火工艺也应用于 CMOS Sensor 和LED等领域。
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